NAND Process Integration Engineer at Micron (Singapore)

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NAND Process Integration Engineer at Micron (Singapore) Shape the future of 3D NAND through advanced nanofabrication and device-process innovation July 29, 2025

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Micron is hiring for a Senior/Principal NAND Process Integration Engineer in Singapore R&D . Lead structural innovation, material selection, and electrical optimization for next-gen 3D NAND memory — a key career path in nanoelectronics R&D .

Field

Nanotechnology, Electrical Engineering, Microelectronics, Materials Science, Chemical Engineering

Title Senior/Principal NAND Process Integration Engineer

Organization Micron Technology Inc.

Work Location Singapore

Research Focus 3D NAND Process Integration, Yield Engineering, Device Reliability

Application Deadline Rolling

Posted Date July 2025

Required Education BS/MS/PhD in Electrical Engg., Materials, Chemical Engg., or related fields

Required Experience 3+ years in semiconductor process, preferably NAND process integration

Micron’s NAND Technology Integration (NTI) group in Singapore is driving the evolution of 3D NAND flash with novel process structures, tighter geometries, and better reliability. As a Process Integration Engineer, you’ll own key modules in the vertical integration flow , optimizing both materials and electrical performance from first silicon to HVM transfer .

Your work will bridge across:

Structural spec and electrical reliability optimization

New material screening and process modeling

Parametric, structural, and failure analysis for 3D NAND

Full cycle of R&D to manufacturing handoff

IP generation, innovation, and experimental design

This is a rare opportunity to impact sub-10nm technology nodes and future non-volatile memory platforms using advanced nanoengineering strategies .

Expertise in NAND process integration or semiconductor device R&D

Strong grasp of device-structure-performance interactions

Hands-on with data analysis tools: Python, Power BI, Tableau, JMP, etc.

Able to lead module development across materials, fab, and yield teams

Passion for technology transfer , innovation, and end-to-end device development

Preferred:

Prior experience in NAND architecture , structural yield loss, or BEOL interactions

Exposure to SolidWorks , DOE methodology, and memory reliability testing

PhD/MS with 3+ years of process or device R&D experience

Micron’s Singapore fab is one of the world’s largest and most advanced NAND manufacturing sites, offering:

A strong R&D ecosystem in non-volatile memory

Global exposure to leading fabs and technology nodes

A culture of IP creation , learning, and collaboration

Access to cutting-edge equipment and cross-domain mentorship

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